Semiconductor structure and manufacturing method thereof

ABSTRACT

A method for manufacturing a semiconductor structure includes forming a plurality of dummy semiconductor fins on a substrate. The dummy semiconductor fins are adjacent to each other and are grouped into a plurality of fin groups. The dummy semiconductor fins of the fin groups are recessed one group at a time.

BACKGROUND

Semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has increased while geometry size (i.e., thesmallest component (or line) that can be created using a fabricationprocess) has decreased. This scaling down process provides increasingproduction efficiency and lowering associated costs.

Such scaling down has also increased the complexity of processing andmanufacturing ICs and similar developments in IC processing andmanufacturing are provided. For example, a three dimensional transistor,such as a fin-like field-effect transistor (FinFET), has been introducedto replace a planar transistor. The fin transistor has a channel(referred to as a fin channel) associated with a top surface andopposite sidewalls. The fin channel has a total channel width defined bythe top surface and the opposite sidewalls.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A to 1H are cross-sectional views of a method for manufacturing asemiconductor device at various stages in accordance with someembodiments of the present disclosure.

FIGS. 2A to 2E are cross-sectional views of a method for manufacturing asemiconductor device at various stages in accordance with someembodiments of the present disclosure.

FIGS. 3A to 3E are cross-sectional views of a method for manufacturing asemiconductor device at various stages in accordance with someembodiments of the present disclosure.

FIGS. 4A to 4E are cross-sectional views of a method for manufacturing asemiconductor device at various stages in accordance with someembodiments of the present disclosure.

FIGS. 5A to 5D are cross-sectional views of a method for manufacturing asemiconductor device at various stages in accordance with someembodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Examples of devices that can be improved from one or more embodiments ofthe present application are semiconductor devices. Such a device, forexample, is a FinFET device. The following disclosure will continue witha FinFET example to illustrate various embodiments of the presentapplication. It is understood, however, that the application should notbe limited to a particular type of device.

FIGS. 1A to 1H are cross-sectional views of a method for manufacturing asemiconductor device at various stages in accordance with someembodiments of the present disclosure. Reference is made to FIG. 1A. Asubstrate 110 is provided. The substrate 110 has at least one isolationregion 102 and at least one active region 104. For example, in FIG. 1A,the substrate 110 has one isolation region 102 and one active region104. In some embodiments, the substrate 110 includes silicon.Alternatively, the substrate 110 may include germanium, silicongermanium, gallium arsenide or other appropriate semiconductormaterials. Also alternatively, the substrate 110 may include anepitaxial layer. For example, the substrate 110 may have an epitaxiallayer overlying a bulk semiconductor. Further, the substrate 110 may bestrained for performance enhancement. For example, the epitaxial layermay include a semiconductor material different from that of the bulksemiconductor, such as a layer of silicon germanium overlying bulksilicon or a layer of silicon overlying bulk silicon germanium. Suchstrained substrate may be formed by selective epitaxial growth (SEG).Furthermore, the substrate 110 may include a semiconductor-on-insulator(SOI) structure. Also alternatively, the substrate 110 may include aburied dielectric layer, such as a buried oxide (BOX) layer, such asthat formed by separation by implantation of oxygen (SIMOX) technology,wafer bonding, SEG, or other appropriate method.

A plurality of dummy semiconductor fins 112 are formed on the isolationregion 102 of the substrate 110. The dummy semiconductor fins 112 areadjacent to each other and are grouped into a plurality of fin groups.In greater detail, there are three fin groups G1, G2, and G3 in FIG. 1A.However, in some other embodiments, the number of the fin groups is notlimited in this respect. The fin groups G1, G2, and G3 are adjacent toeach other. For example, in FIG. 1A, the fin group G1 is disposedbetween the fin groups G2 and G3. The fin groups G1, G2, and G3respectively include at least two adjacent dummy semiconductor fins 112.For example, in FIG. 1A, the fin groups G1, G2, and G3 respectivelyinclude two adjacent dummy semiconductor fins 112. It is noted that thenumber of the dummy semiconductor fins 112 in FIG. 1A are illustrative,and should not limit the claimed scope of the present disclosure. Aperson having ordinary skill in the art may select suitable numbers forthe dummy semiconductor fins 112 according to actual situations.

In some embodiments, the dummy semiconductor fins 112 include silicon.The dummy semiconductor fins 112 may be formed, for example, bypatterning and etching the substrate 110 using photolithographytechniques. In some embodiments, a layer of photoresist material (notshown) is deposited over the substrate 110. The layer of photoresistmaterial is irradiated (exposed) in accordance with a desired pattern(the dummy semiconductor fins 112 in this case) and developed to removea portion of the photoresist material. The remaining photoresistmaterial protects the underlying material from subsequent processingsteps, such as etching. It should be noted that other masks, such as anoxide or silicon nitride mask, may also be used in the etching process.

In some embodiments, at least one active semiconductor fin 114 is formedon the active region 104 of the substrate 110. For example, in FIG. 1A,there are three active semiconductor fins 114. The active semiconductorfins 114 have functionality in the semiconductor device while the dummysemiconductor fins 112 have no functionality in the semiconductor devicebut make the device processes more uniform, more reproducible, and moremanufacturable.

The active semiconductor fins 114 can be formed with the dummysemiconductor fins 112. In some embodiments, the height H1 of the dummysemiconductor fins 112 and the height H2 of the active semiconductorfins 114 can be about 100 nm to about 160 nm, and the claimed scope isnot limited in this respect.

In some embodiments, an oxide define (OD) pattern 116 can be formed onthe active region 104 of the substrate 110. In FIG. 1A, the OD pattern116 is disposed between the active semiconductor fins 114 and the dummysemiconductor fins 112 for defining active areas, and the claimed scopeof the present disclosure is not limited in this respect. The OD pattern116 can be formed with the dummy semiconductor fins 112 and the activesemiconductor fins 114. In FIG. 1A, the active semiconductor fins 114and the OD pattern 116 are active structures.

For forming the dummy semiconductor fins 112, the active semiconductorfins 114, and the OD pattern 116, a pad layer 122 and a mask layer 124can be formed on the substrate 110 in advanced. The pad layer 122includes a dielectric material, such as silicon oxide, silicon nitride,silicon oxynitride, or any other suitable dielectric material. The masklayer 124 includes a dielectric material, such as silicon oxide, siliconnitride, silicon oxynitride, or any other suitable dielectric material.In some embodiments, the mask layer 124 is a hard mask layer. In someembodiments, the pad layer 122 is a silicon oxide layer deposited on thesubstrate 110, and the mask layer 124 is a silicon nitride layerdeposited on the pad layer 122. The pad layer 122 and the mask layer 124can be formed by thermal oxidation, chemical oxidation, atomic layerdeposition (ALD), or any other appropriate method. In some embodiments,the thickness of the pad layer 122 may be between about 100-800Angstroms, and the thickness of the mask layer 124 may be between about200-2000 Angstroms. Subsequently, a lithography process defining thedummy semiconductor fins 112, the active semiconductor fins 114, and theOD pattern 116 on the semiconductor substrate 110 is performed.

Reference is made to FIG. 1B. A tri-layer photoresist 130 may be used,including a photoresist (PR) layer 132 as the top or uppermost portion,a middle layer 134, and a bottom layer 136. The tri-layer photoresist130 covers the dummy semiconductor fins 112, the active semiconductorfins 114, and the OD pattern 116. The tri-layer photoresist 130 providesthe PR layer 132, the middle layer 134 which may include anti-reflectivelayers or backside anti-reflective layers to aid in the exposure andfocus of the PR processing, and the bottom layer 136 which may be a hardmask material; for example, a nitride.

The PR layer 132 of the tri-layer photoresist 130 is then patterned. Thepatterned PR layer 132 exposes portions of the middle layer 134 disposedon the dummy semiconductor fins 112 of the fin group G1. Meanwhile,another portions of the middle layer 134 disposed on the dummysemiconductor fins 112 of the fin groups G2 and G3, the activesemiconductor fins 114, and the OD pattern 116 are still covered by thePR layer 132. To pattern the tri-layer photoresist 130, the PR layer 132is patterned using a mask, exposure to radiation, such as light or anexcimer laser, for example, a bake or cure operation to harden theresist, and use of a developer to remove either the exposed or unexposedportions of the resist, depending on whether a positive resist or anegative resist is used, to form the pattern from the mask in the PRlayer 132. This patterned PR layer 132 is then used to etch theunderlying middle layer 134 and bottom layer 136 to form an etch maskfor the target features; here, the dummy semiconductor fins 112 of thefin group G1.

Reference is made to FIG. 1C. Using the patterned PR layer 132 (see FIG.1B) as a mask, the middle layer 134 and the bottom layer 136 of thetri-layer photoresist 130 (see FIG. 1B) are etched by various methods,including a dry etch, a wet etch, or a combination of dry etch and wetetch. Then, portions of the mask layer 124 and the pad layer 122 (seeFIG. 1B) disposed on the dummy semiconductor fins 112 of the fin groupG1 are removed (or etched). Next, at least portions of the dummysemiconductor fins 112 of the fin group G1 are recessed (or etched orremoved). The dry etching process may implement fluorine-containing gas(e.g., CF₄, SF₆, CH₂F₂, CHF₃, and/or C₂F₆), chlorine-containing gas(e.g., Cl₂, CHCl₃, CCl₄, and/or BCl₃), bromine-containing gas (e.g., HBrand/or CHBr₃), oxygen-containing gas, iodine-containing gas, othersuitable gases and/or plasmas, or combinations thereof. The etchingprocess may include a multiple-step etching to gain etch selectivity,flexibility and desired etch profile. After the dummy semiconductor fins112 of the fin group G1 are partially recessed, the PR layer 132, themiddle layer 134 and the bottom layer 136 of the tri-layer photoresist130 are removed, for example, by ashing. The ashing operation such as aplasma ash removes the remaining tri-layer photoresist 130, and a wetclean may be performed to clean the etch residues.

In FIG. 1C, the heights H1 a of the recessed dummy semiconductor fins112 of the fin group G1 can be about 15 nm to about 30 nm. At least oneof the dummy semiconductor fins 112 of the fin group G1 has a topsurface 113 a. The top surface 113 a can be concave. In someembodiments, the top surfaces 113 a of the dummy semiconductor fins 112of the fin group G1 are curved inwardly. Moreover, in some embodiments,the heights H1 a of the two recessed dummy semiconductor fins 112 of thefin group G1 are substantially the same. The term “substantially” asused herein may be applied to modify any quantitative representationwhich could permissibly vary without resulting in a change in the basicfunction to which it is related.

Reference is made to FIG. 1D. Another tri-layer photoresist 140 may beused, including a photoresist (PR) layer 142 as the top or uppermostportion, a middle layer 144, and a bottom layer 146. The tri-layerphotoresist 140 covers the dummy semiconductor fins 112, the activesemiconductor fins 114, and the OD pattern 116. The tri-layerphotoresist 140 provides the PR layer 142, the middle layer 144 whichmay include anti-reflective layers or backside anti-reflective layers toaid in the exposure and focus of the PR processing, and the bottom layer146 which may be a hard mask material; for example, a nitride.

The PR layer 142 of the tri-layer photoresist 140 is then patterned. Thepatterned PR layer 142 exposes portions of the middle layer 144 disposedon the dummy semiconductor fins 112 of the fin group G2. Meanwhile,another portions of the middle layer 144 disposed on the dummysemiconductor fins 112 of the fin groups G1 and G3, the activesemiconductor fins 114, and the OD pattern 116 are still covered by thePR layer 142. To pattern the tri-layer photoresist 140, the PR layer 142is patterned using a mask, exposure to radiation, such as light or anexcimer laser, for example, a bake or cure operation to harden theresist, and use of a developer to remove either the exposed or unexposedportions of the resist, depending on whether a positive resist or anegative resist is used, to form the pattern from the mask in the PRlayer 142. This patterned PR layer 142 is then used to etch theunderlying middle layer 144 and bottom layer 146 to form an etch maskfor the target features; here, the dummy semiconductor fins 112 of thefin group G2.

Reference is made to FIG. 1E. Using the patterned PR layer 142 (see FIG.1D) as a mask, the middle layer 144 and the bottom layer 146 of thetri-layer photoresist 140 (see FIG. 1D) are etched by various methods,including a dry etch, a wet etch, or a combination of dry etch and wetetch. Then, portions of the mask layer 124 and the pad layer 122 (seeFIG. 1D) disposed on the dummy semiconductor fins 112 of the fin groupG2 are removed (or etched). Next, at least portions of the dummysemiconductor fins 112 of the fin group G2 are recessed (or etched orremoved). The dry etching process may implement fluorine-containing gas(e.g., CF₄, SF₆, CH₂F₂, CHF₃, and/or C₂F₆), chlorine-containing gas(e.g., Cl₂, CHCl₃, CCl₄, and/or BCl₃), bromine-containing gas (e.g., HBrand/or CHBr₃), oxygen-containing gas, iodine-containing gas, othersuitable gases and/or plasmas, or combinations thereof. The etchingprocess may include a multiple-step etching to gain etch selectivity,flexibility and desired etch profile. After the dummy semiconductor fins112 of the fin group G2 are partially removed, the PR layer 142, themiddle layer 144 and the bottom layer 146 of the tri-layer photoresist140 are removed, for example, by ashing. The ashing operation such as aplasma ash removes the remaining tri-layer photoresist 140, and a wetclean may be performed to clean the etch residues.

In FIG. 1E, the heights H1 b of the recessed dummy semiconductor fins112 of the fin group G2 can be about 15 nm to about 30 nm. Moreover, theheight difference between the recessed dummy semiconductor fins 112 ofthe fin group G2 and G1 is less than about 5 nm, or is less than about2% of the height H2 of the active semiconductor fin 114 (see FIG. 1A).That is, the dummy semiconductor fins 112 have a height variation ofless than about 5 nm. Or, the heights H1 a and H1 b are substantiallythe same. The terms “substantially” as used herein may be applied tomodify any quantitative representation which could permissibly varywithout resulting in a change in the basic function to which it isrelated.

The dummy semiconductor fins 112 of the fin group G2 respectively havetop surfaces 113 b. The top surfaces 113 b can be non-concave, forexample, convex or substantially flat. That is, the top surfaces 113 bof the recessed dummy semiconductor fins 112 of the fin group G2 arecurved outwardly. At least one of the top surfaces 113 a of the recesseddummy semiconductor fins 112 of the fin group G1 and at least one of thetop surfaces 113 b of the recessed dummy semiconductor fins 112 of thefin group G2 are curved in different directions. For example, the topsurfaces 113 a of the recessed dummy semiconductor fins 112 of the fingroup G1 are concave (or curved inwardly), and the top surfaces 113 b ofthe recessed dummy semiconductor fins 112 of the fin group G2 arenon-concave, such as convex (or curved outwardly) or substantially flat.

Reference is made to FIG. 1F. Still another tri-layer photoresist 150may be used, including a photoresist (PR) layer 152 as the top oruppermost portion, a middle layer 154, and a bottom layer 156. Thetri-layer photoresist 150 covers the dummy semiconductor fins 112, theactive semiconductor fins 114, and the OD pattern 116. The tri-layerphotoresist 150 provides the PR layer 152, the middle layer 154 whichmay include anti-reflective layers or backside anti-reflective layers toaid in the exposure and focus of the PR processing, and the bottom layer156 which may be a hard mask material; for example, a nitride.

The PR layer 152 of the tri-layer photoresist 150 is then patterned. Thepatterned PR layer 152 exposes portions of the middle layer 154 disposedon the dummy semiconductor fins 112 of the fin group G3. Meanwhile,another portions of the middle layer 154 disposed on the dummysemiconductor fins 112 of the fin groups G1 and G2, the activesemiconductor fins 114, and the OD pattern 116 are still covered by thePR layer 152. To pattern the tri-layer photoresist 150, the PR layer 152is patterned using a mask, exposure to radiation, such as light or anexcimer laser, for example, a bake or cure operation to harden theresist, and use of a developer to remove either the exposed or unexposedportions of the resist, depending on whether a positive resist or anegative resist is used, to form the pattern from the mask in the PRlayer 152. This patterned PR layer 152 is then used to etch theunderlying middle layer 154 and bottom layer 156 to form an etch maskfor the target features; here, the dummy semiconductor fins 112 of thefin group G3.

Reference is made to FIG. 1G. Using the patterned PR layer 152 (see FIG.1F) as a mask, the middle layer 154 and the bottom layer 156 of thetri-layer photoresist 150 (see FIG. 1F) are etched by various methods,including a dry etch, a wet etch, or a combination of dry etch and wetetch. Then, portions of the mask layer 124 and the pad layer 122 (seeFIG. 1F) disposed on the dummy semiconductor fins 112 of the fin groupG3 are removed (or etched). Next, at least portions of the dummysemiconductor fins 112 of the fin group G3 are recessed (or etched orremoved). The dry etching process may implement fluorine-containing gas(e.g., CF₄, SF₆, CH₂F₂, CHF₃, and/or C₂F₆), chlorine-containing gas(e.g., Cl₂, CHCl₃, CCl₄, and/or BCl₃), bromine-containing gas (e.g., HBrand/or CHBr₃), oxygen-containing gas, iodine-containing gas, othersuitable gases and/or plasmas, or combinations thereof. The etchingprocess may include a multiple-step etching to gain etch selectivity,flexibility and desired etch profile. After the dummy semiconductor fins112 of the fin group G3 are partially removed, the PR layer 152, themiddle layer 154 and the bottom layer 156 of the tri-layer photoresist150 are removed, for example, by ashing. The ashing operation such as aplasma ash removes the remaining tri-layer photoresist iso, and a wetclean may be performed to clean the etch residues.

Therefore, in FIGS. 1A to 1G, the dummy semiconductor fins 112 of thefin group disposed at the edge portion E (see FIG. 1H) of the isolationregion 102 (i.e., the fin group G2 or G3) are recessed after the dummysemiconductor fins 112 of the fin group disposed at the middle portion M(see FIG. 1H) of the isolation region 102 (i.e., the fin group G1) arerecessed.

In FIG. 1G, the heights H1 c of the recessed dummy semiconductor fins112 of the fin group G3 can be about 15 nm to about 30 nm. Moreover, theheight difference among the recessed dummy semiconductor fins 112 of thefin group G1, G2, and G3 is less than about 5 nm, or is less than about2% of the height H2 of the active semiconductor fin 114 (see FIG. 1A).Or, the heights H1 a, H1 b, and H1 c are substantially the same. Theterms “substantially” as used herein may be applied to modify anyquantitative representation which could permissibly vary withoutresulting in a change in the basic function to which it is related.

The dummy semiconductor fins 112 of the fin group G3 respectively havetop surfaces 113 c. The top surfaces 113 c can be non-concave, forexample, convex or substantially flat. That is, the top surfaces 113 cof the recessed dummy semiconductor fins 112 of the fin group G3 arecurved outwardly. At least one of the top surfaces 113 a of the recesseddummy semiconductor fins 112 of the fin group G1 and at least one of thetop surfaces 113 c of the recessed dummy semiconductor fins 112 of thefin group G3 are curved in different directions. For example, the topsurfaces 113 a of the recessed dummy semiconductor fins 112 of the fingroup G1 are concave (or curved inwardly), and the top surfaces 113 c ofthe recessed dummy semiconductor fins 112 of the fin group G3 arenon-concave, such as convex (or curved outwardly) or substantially flat.

According to the aforementioned embodiments, the dummy semiconductorfins of different fin groups are removed (or etched or cut) one group ata time. Furthermore, for one time, at least two of the dummysemiconductor fins are removed. Such processes can prevent the featuresdisposed on the active region of the substrate (e.g., the activesemiconductor fins and the OD pattern) from being damaged during theremoving processes of the dummy semiconductor fins. Also, such processescan obtain the recessed dummy semiconductor fins with substantially thesame height. Furthermore, it is noted that although in FIGS. 1A to 1G,three etching processes are performed to recess the dummy semiconductorfins one group at a time, i.e., the dummy semiconductor fins are grouped(or divided) into three fin groups, the claimed scope of the presentdisclosure is not limited in this respect. In some other embodiments,embodiments fall within the claimed scope as long as the dummysemiconductor fins are grouped (or divided) into at least two fingroups, each of which includes at least adjacent two of the dummysemiconductor fins, and the fin groups are recessed one group at a time.

Reference is made to FIG. 1H. In some embodiments, at least oneisolation structure 160 is formed to cover the recessed dummysemiconductor fins 112 while leave the active semiconductor fins 114 andthe OD pattern 116 uncovered. That is, the recessed dummy semiconductorfins 112 are embedded under the isolation structure 160. The activesemiconductor fins 114 can be source/drain features of at least one finfield effect transistor (finFET).

In some embodiments, the isolation structure 160 includes silicon oxide,silicon nitride, silicon oxynitride, other suitable materials, orcombinations thereof. The isolation structure 160 is formed by suitableprocess. For example, the isolation structure 160 is formed by fillingthe trench between the semiconductor features (i.e., the dummysemiconductor fins 112, the active semiconductor fins 114, and the ODpattern 116) with one or more dielectric materials by using a chemicalvapor deposition (CVD). In some embodiments, the isolation structure 160may have a multi-layer structure such as a thermal oxide liner layerfilled with silicon nitride or silicon oxide. At least one annealingprocess may be performed after the formation of the isolation structure160. In some embodiments, the pad layer 122 and the mask layer 124 (seeFIG. 1G) can be removed during the formation process of the isolationstructure 160.

After forming the isolation structure 160, the semiconductor device mayundergo further CMOS or MOS technology processing to form variousfeatures and regions. For example, further fabrication processes mayinclude, among other things, forming a gate structure on the substrate110, including on a portion of the active semiconductor fins 116 andforming source and drain (S/D) regions on opposite sides of the gatestructure, including another portion of the active semiconductor fins116. The formation of the gate structure may include depositing,patterning, and etching processes. A gate spacer may be formed on thewalls of the gate structure by deposition and etching techniques. S/Dregions may be formed by recess, epitaxially growing and implanttechniques. Additional processes can be provided before, during, andafter the processes mentioned above, and some of the processes describedcan be replaced or eliminated for other embodiments of the method.

Subsequent processing may also form various contacts/vias/lines andmultilayer interconnect features (e.g., metal layers and interlayerdielectrics) on the substrate 110, configured to connect the variousfeatures or structures of the semiconductor device. For example, amultilayer interconnection includes vertical interconnects, such asconventional vias or contacts, and horizontal interconnects, such asmetal lines. The various interconnection features may implement variousconductive materials including copper, tungsten, and/or silicide. Insome embodiments, a damascene and/or dual damascene process is used toform a copper related multilayer interconnection structure.

FIGS. 2A to 2E are cross-sectional views of a method for manufacturing asemiconductor device at various stages in accordance with someembodiments of the present disclosure. Reference is made to FIG. 2A. Asubstrate 110 is provided. The substrate 110 has one isolation region102 and two active regions 104, where the isolation region 102 isdisposed between the two active regions 104.

Three fin groups G1, G2, and G3 are formed on the dummy region 104 ofthe substrate 110. The fin groups G1, G2, and G3 are adjacent to eachother. For example, in FIG. 2A, the fin group G1 is disposed between thefin groups G2 and G3. The fin groups G1, G2, and G3 respectively includetwo adjacent dummy semiconductor fins 112. Moreover, at least two activesemiconductor fins 114 are respectively formed on the active regions 104of the substrate 110. That is, the dummy semiconductor fins 112 aredisposed between the two active semiconductor fins 114. The activesemiconductor fins 114 can be formed with the dummy semiconductor fins112.

Reference is made to FIG. 2B. The dummy semiconductor fins 112 of thefin group G1 is recessed. The recessing details are similar to theprocesses of FIGS. 1B to 1C, and, therefore, a description in thisregard will not be repeated hereinafter.

Reference is made to FIG. 2C. The dummy semiconductor fins 112 of thefin group G2 is recessed. The recessing details are similar to theprocesses of FIGS. 1D to 1E, and, therefore, a description in thisregard will not be repeated hereinafter.

Reference is made to FIG. 2D. The dummy semiconductor fins 112 of thefin group G3 is recessed. The recessing details are similar to theprocesses of FIGS. 1F to 1G, and, therefore, a description in thisregard will not be repeated hereinafter. Therefore, in FIGS. 2A to 2D,the dummy semiconductor fins 112 of the fin group disposed at the edgeportion E (see FIG. 2D) of the isolation region 102 (i.e., the fin groupG2 or G3) are recessed after the dummy semiconductor fins 112 of the fingroup disposed at the middle portion (see FIG. 2D) of the isolationregion 102 (i.e., the fin group G/l) are recessed.

Reference is made to FIG. 2E. At least one isolation structure 160 isformed to cover the recessed dummy semiconductor fins 112 while leavethe active semiconductor fins 114 uncovered. That is, the recessed dummysemiconductor fins 112 are embedded under the isolation structure 160.The active semiconductor fins 114 can be source/drain features of atleast one fin field effect transistor (finFET). The forming details aresimilar to the processes of FIG. 1H, and, therefore, a description inthis regard will not be repeated hereinafter. Other relevant structuraldetails of the semiconductor device of FIGS. 2A to 2E are similar to thesemiconductor device of FIGS. 1A to 1H, and, therefore, a description inthis regard will not be repeated hereinafter.

FIGS. 3A to 3E are cross-sectional views of a method for manufacturing asemiconductor device at various stages in accordance with someembodiments of the present disclosure. Reference is made to FIG. 3A. Asubstrate 110 is provided. Three fin groups G1, G2, and G3 are formed onthe dummy region 104 of the substrate 110. Since the structural detailsof the substrate and the fin groups G1, G2, and G3 are similar to FIG.2A, and, therefore, a description in this regard will not be repeatedhereinafter.

Reference is made to FIG. 3B. The dummy semiconductor fins 112 of thefin group G2 is recessed. The recessing details are similar to theprocesses of FIGS. 1D to 1E, and, therefore, a description in thisregard will not be repeated hereinafter.

Reference is made to FIG. 3C. The dummy semiconductor fins 112 of thefin group G3 is recessed. The recessing details are similar to theprocesses of FIGS. 1F to 1G, and, therefore, a description in thisregard will not be repeated hereinafter.

Reference is made to FIG. 3D. The dummy semiconductor fins 112 of thefin group G1 is recessed. The recessing details are similar to theprocesses of FIGS. 1B to 1C, and, therefore, a description in thisregard will not be repeated hereinafter. Therefore, in FIGS. 3A to 3D,the dummy semiconductor fins 112 of the fin group disposed at the edgeportion E (see FIG. 3D) of the isolation region 102 (i.e., the fin groupG2 or G3) are recessed before the dummy semiconductor fins 112 of thefin group disposed at the middle portion M (see FIG. 3D) of theisolation region 102 (i.e., the fin group G1) are recessed.

Reference is made to FIG. 3E. At least one isolation structure 160 isformed to cover the recessed dummy semiconductor fins 112 while leavethe active semiconductor fins 114 uncovered. That is, the recessed dummysemiconductor fins 112 are embedded under the isolation structure 160.The active semiconductor fins 114 can be source/drain features of atleast one fin field effect transistor (finFET). The forming details aresimilar to the processes of FIG. 1H, and, therefore, a description inthis regard will not be repeated hereinafter. Other relevant structuraldetails of the semiconductor device of FIGS. 3A to 3E are similar to thesemiconductor device of FIGS. 1A to 1H, and, therefore, a description inthis regard will not be repeated hereinafter.

FIGS. 4A to 4E are cross-sectional views of a method for manufacturing asemiconductor device at various stages in accordance with someembodiments of the present disclosure. Reference is made to FIG. 4A. Asubstrate 110 is provided. Three fin groups G1, G2, and G3 are formed onthe dummy region 104 of the substrate 110. Since the structural detailsof the substrate and the fin groups G1, G2, and G3 are similar to FIG.2A, and, therefore, a description in this regard will not be repeatedhereinafter.

Reference is made to FIG. 4B. The dummy semiconductor fins 112 of thefin group G2 is recessed. The recessing details are similar to theprocesses of FIGS. 1D to 1E, and, therefore, a description in thisregard will not be repeated hereinafter.

Reference is made to FIG. 4C. The dummy semiconductor fins 112 of thefin group G1 is recessed. The recessing details are similar to theprocesses of FIGS. 1B to 1C, and, therefore, a description in thisregard will not be repeated hereinafter.

Reference is made to FIG. 4D. The dummy semiconductor fins 112 of thefin group G3 is recessed. The recessing details are similar to theprocesses of FIGS. 1F to 1G, and, therefore, a description in thisregard will not be repeated hereinafter.

Reference is made to FIG. 4E. At least one isolation structure 160 isformed to cover the recessed dummy semiconductor fins 112 while leavethe active semiconductor fins 114 uncovered. That is, the recessed dummysemiconductor fins 112 are embedded under the isolation structure 160.The active semiconductor fins 114 can be source/drain features of atleast one fin field effect transistor (finFET). The forming details aresimilar to the processes of FIG. 1H, and, therefore, a description inthis regard will not be repeated hereinafter. Other relevant structuraldetails of the semiconductor device of FIGS. 4A to 4E are similar to thesemiconductor device of FIGS. 1A to 1H, and, therefore, a description inthis regard will not be repeated hereinafter.

FIGS. 5A to 5D are cross-sectional views of a method for manufacturing asemiconductor device at various stages in accordance with someembodiments of the present disclosure. Reference is made to FIG. 5A. Asubstrate 110 is provided. The substrate 110 has one isolation region102 and two active regions 104, where the isolation region 102 isdisposed between the two active regions 104.

Two fin groups G1 and G2 are formed on the dummy region 104 of thesubstrate 110. The fin groups G1 and G2 are adjacent to each other. Thefin groups G1 and G2 respectively include at least two adjacent dummysemiconductor fins 112. For example, the fin group G1 includes three ofthe dummy semiconductor fins 112, and the fin group G2 includes two ofthe dummy semiconductor fins 112. Moreover, two active semiconductorfins 114 are respectively formed on the active regions 104 of thesubstrate 110. That is, the dummy semiconductor fins 112 are disposedbetween the two active semiconductor fins 114. The active semiconductorfins 114 can be formed with the dummy semiconductor fins 112.

Reference is made to FIG. 5B. The dummy semiconductor fins 112 of thefin group G1 is recessed. The recessing details are similar to theprocesses of FIGS. 1B to 1C, and, therefore, a description in thisregard will not be repeated hereinafter.

Reference is made to FIG. 5C. The dummy semiconductor fins 112 of thefin group G2 is recessed. The recessing details are similar to theprocesses of FIGS. 1D to 1E, and, therefore, a description in thisregard will not be repeated hereinafter.

Reference is made to FIG. 5D. At least one isolation structure 160 isformed to cover the recessed dummy semiconductor fins 112 while leavethe active semiconductor fins 114 uncovered. That is, the recessed dummysemiconductor fins 112 are embedded under the isolation structure 160.The active semiconductor fins 114 can be source/drain features of atleast one fin field effect transistor (finFET). The forming details aresimilar to the processes of FIG. 1H, and, therefore, a description inthis regard will not be repeated hereinafter. Other relevant structuraldetails of the semiconductor device of FIGS. 5A to 5D are similar to thesemiconductor device of FIGS. 1A to 1H, and, therefore, a description inthis regard will not be repeated hereinafter.

According to some embodiments, a method for manufacturing asemiconductor structure includes forming a plurality of dummysemiconductor fins on a substrate. The dummy semiconductor fins areadjacent to each other and are grouped into a plurality of fin groups.The dummy semiconductor fins of the fin groups are recessed one group ata time.

According to some embodiments, a method for manufacturing asemiconductor structure includes forming a first fin group and a secondfin group on a substrate. The first fin group is disposed adjacent tothe second fin group. The first fin group includes at least two adjacentfirst dummy semiconductor fins, and the second fin group includes atleast two adjacent second dummy semiconductor fins. The first dummysemiconductor fins of the first fin group are recessed. The second dummysemiconductor fins of the second fin group are recessed. The recessingthe first dummy semiconductor fins of the first fin group and therecessing the second dummy semiconductor fins of the second fin groupare performed separately.

According to some embodiments, a semiconductor substrate includes asubstrate, at least one active structure, and a plurality of dummysemiconductor fins. The active structure is disposed on the substrate.The dummy semiconductor fins are disposed on the substrate and adjacentto the active structure. The dummy semiconductor fins are shorter thanthe active structure, and the dummy semiconductor fins has a highvariation of less than about 5 nm.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor structure comprising: asubstrate; at least one active structure disposed on the substrate; aplurality of dummy semiconductor fins disposed on the substrate andadjacent to the at least one active structure, wherein a first pair ofthe plurality of dummy semiconductor fins have non-concave topmostsurfaces, wherein a second pair of the plurality of dummy semiconductorfins have concave topmost surfaces, wherein a third pair of theplurality of dummy semiconductor fins have non-concave topmost surfaces,wherein the second pair of the plurality of dummy semiconductor fins aredisposed between the first pair of the plurality of dummy semiconductorfins and the third pair of the plurality of dummy semiconductor fins,wherein the plurality of dummy semiconductor fins are shorter than theat least one active structure, wherein the plurality of dummysemiconductor fins have a height variation of less than about 5 nm, andwherein topmost surfaces of the plurality of dummy semiconductor finsare below a topmost surface of the at least one active structure; and anisolation structure covering the plurality of dummy semiconductor fins,at least a portion of the at least one active structure extending abovea topmost surface of the isolation structure.
 2. The semiconductorstructure of claim 1, wherein the at least one active structure is anactive semiconductor fin.
 3. The semiconductor structure of claim 1,wherein a height of the at least one active structure is between about100 nm and about 160 nm.
 4. The semiconductor structure of claim 1,wherein a height of the first pair of the plurality of dummysemiconductor fins is between about 15 nm and about 30 nm.
 5. Thesemiconductor structure of claim 1, wherein the first pair of theplurality of dummy semiconductor fins, the second pair of the pluralityof dummy semiconductor fins and the third pair of the plurality of dummysemiconductor fins are disposed on a same side of the at least oneactive structure.
 6. A semiconductor structure comprising: a substrate;at least one active structure disposed on the substrate; and a pluralityof dummy semiconductor fins disposed adjacent to the at least one activestructure, wherein at least two of the dummy semiconductor fins haveconcave top surfaces, and at least another two of the dummysemiconductor fins have non-concave top surfaces, and wherein the atleast two of the dummy semiconductor fins having the concave topsurfaces are disposed between the at least another two of the dummysemiconductor fins having the non-concave top surfaces.
 7. Thesemiconductor structure of claim 6, further comprising an isolationstructure covering the dummy semiconductor fins.
 8. The semiconductorstructure of claim 7, wherein a portion of the at least one activestructure protrudes from the isolation structure.
 9. The semiconductorstructure of claim 7, wherein a topmost surface of the isolationstructure is below a topmost surface of the at least one activestructure.
 10. The semiconductor structure of claim 6, wherein the atleast two of the dummy semiconductor fins having the concave topsurfaces are adjacent to each other.
 11. The semiconductor structure ofclaim 6, wherein the at least two of the dummy semiconductor fins havingthe non-concave top surfaces are adjacent to each other.
 12. Thesemiconductor structure of claim 6, wherein the at least one activestructure is an oxide define pattern.
 13. A semiconductor structurecomprising: a substrate; at least one active structure disposed on thesubstrate, wherein the at least one active structure has a first height;and a plurality of dummy semiconductor fins disposed adjacent to the atleast one active structure, wherein a height difference of two dummysemiconductor fins of the plurality of dummy semiconductor fins is lessthan 2% of the first height of the at least one active structure,wherein a top surface of a first one of the two dummy semiconductor finsis curved outwardly, wherein a top surface of a second one of the twodummy semiconductor fins is curved inwardly, and wherein the first oneof the two dummy semiconductor fins is interposed between the at leastone active structure and the second one of the two dummy semiconductorfins.
 14. The semiconductor structure of claim 13, wherein top surfacesof the two dummy semiconductor fins are curved outwardly.
 15. Thesemiconductor structure of claim 13, wherein top surfaces of the twodummy semiconductor fins are curved inwardly.
 16. The semiconductorstructure of claim 13, wherein the two dummy semiconductor fins areadjacent to each other.
 17. The semiconductor structure of claim 13,further comprising an isolation structure disposed on the plurality ofdummy semiconductor fins.
 18. The semiconductor structure of claim 17,wherein a portion of the at least one active structure protrudes fromthe isolation structure.
 19. The semiconductor structure of claim 17,wherein the isolation structure is in physical contact with the topsurface of the first one of the two dummy semiconductor fins and the topsurface of the second one of the two dummy semiconductor fins.
 20. Thesemiconductor structure of claim 13, wherein the at least one activestructure is an oxide define pattern.